Invention Grant
- Patent Title: Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same
- Patent Title (中): 一种半导体发光元件用基板的制造方法及使用其的半导体发光元件
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Application No.: US14152765Application Date: 2014-01-10
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Publication No.: US09054271B2Publication Date: 2015-06-09
- Inventor: Shunsuke Minato , Junya Narita , Yohei Wakai , Yukio Narukawa , Motokazu Yamada
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-344482 20061221; JP2007-271764 20071018
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/267 ; H01L33/24 ; H01L33/10 ; H01L33/20 ; H01L33/32
Abstract:
A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.
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