Invention Grant
US09056763B2 Stress buffer layer for integrated microelectromechanical systems (MEMS)
有权
用于集成微机电系统(MEMS)的应力缓冲层
- Patent Title: Stress buffer layer for integrated microelectromechanical systems (MEMS)
- Patent Title (中): 用于集成微机电系统(MEMS)的应力缓冲层
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Application No.: US14039157Application Date: 2013-09-27
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Publication No.: US09056763B2Publication Date: 2015-06-16
- Inventor: Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
- Applicant: Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; B81C1/00 ; B81B7/00

Abstract:
Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
Public/Granted literature
- US20150091167A1 STRESS BUFFER LAYER FOR INTEGRATED MICROELECTROMECHANICAL SYSTEMS (MEMS) Public/Granted day:2015-04-02
Information query
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