发明授权
- 专利标题: Semiconductor light emitting device and semiconductor wafer
- 专利标题(中): 半导体发光器件和半导体晶片
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申请号: US13405509申请日: 2012-02-27
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公开(公告)号: US09065003B2公开(公告)日: 2015-06-23
- 发明人: Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
- 申请人: Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-224368 20111011
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L33/12 ; H01L33/32 ; H01L33/02
摘要:
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.