公开(公告)号：US09065003B2

公开(公告)日：2015-06-23

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US20130087760A1

公开(公告)日：2013-04-11

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US20130062612A1

公开(公告)日：2013-03-14

申请号：US13407169

申请日：2012-02-28

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.

摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。 基底层包括形成在基底上的AlN缓冲层。 第一堆叠中间层设置在基础层上。 第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。 功能层设置在第一堆叠中间层上。 第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。 第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

公开(公告)号：US08785943B2

公开(公告)日：2014-07-22

申请号：US13407169

申请日：2012-02-28

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.

摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。 基底层包括形成在基底上的AlN缓冲层。 第一堆叠中间层设置在基础层上。 第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。 功能层设置在第一堆叠中间层上。 第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。 第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

公开(公告)号：US08093083B1

公开(公告)日：2012-01-10

申请号：US13029416

申请日：2011-02-17

申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该器件包括包含氮化物半导体的晶体层。 晶体层含有In和Ga原子。 该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。 晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。 第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。 （1-1 / xv）/（1-1 / xs）小于0.1。

公开(公告)号：US08952401B2

公开(公告)日：2015-02-10

申请号：US13220059

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L33/44 ,  H01L33/08 ,  H01L33/40 ,  H01L33/42

CPC分类号： H01L33/58 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。 第一半导体层具有与第一主表面相对的第一主表面和第二主表面。 发光层具有设置在第二主表面上的有源层。 第二半导体层设置在发光层上。 低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

公开(公告)号：US20120292592A1

公开(公告)日：2012-11-22

申请号：US13218909

申请日：2011-08-26

申请人： Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L33/26

CPC分类号： H01L33/32 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。 第一半导体层通过基底层形成在硅衬底上。 发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0

公开(公告)号：US08928000B2

公开(公告)日：2015-01-06

申请号：US13405903

申请日：2012-02-27

申请人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/15 ,  H01L21/02 ,  C30B23/02 ,  H01L31/10 ,  C30B25/18 ,  H01L33/04 ,  H01L29/778 ,  H01L29/812 ,  H01L33/12 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L33/04 ,  C30B23/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/812 ,  H01L31/10 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×1018 cm−3 or more and less than 1×1021 cm−3. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括硅衬底，设置在硅衬底上的下部应变弛豫层，设置在下部应变弛豫层上的中间层，设置在中间层上的上部应变弛豫层和功能性 层设置在上部应变松弛层上。 中间层包括第一下层，设置在第一下层上的第一掺杂层和设置在第一掺杂层上的第一上层。 第一掺杂层的晶格常数大于或等于第一下层的晶格常数，并且含有1×1018cm-3以上且小于1×1021cm-3的杂质。 第一上层具有大于或等于第一掺杂层的晶格常数，并且大于第一下层的晶格常数。

公开(公告)号：US08809101B2

公开(公告)日：2014-08-19

申请号：US13218909

申请日：2011-08-26

申请人： Jongil Hwang ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1−z1Inz1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。 第一半导体层通过基底层形成在硅衬底上。 发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0

公开(公告)号：US08525194B2

公开(公告)日：2013-09-03

申请号：US13222561

申请日：2011-08-31

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/201 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.