Invention Grant
- Patent Title: Indirectly heated cathode cartridge design
- Patent Title (中): 间接加热阴极筒设计
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Application No.: US13082495Application Date: 2011-04-08
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Publication No.: US09076625B2Publication Date: 2015-07-07
- Inventor: Craig Chaney , Leo Klos , Anthony Renau , Alexander Perel
- Applicant: Craig Chaney , Leo Klos , Anthony Renau , Alexander Perel
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J37/067 ; H01J19/20 ; H01J29/48 ; H01J19/14 ; H01J37/02 ; H01J37/075 ; H01J37/317
Abstract:
An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
Public/Granted literature
- US20120256097A1 INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN Public/Granted day:2012-10-11
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