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US09087543B2 Spin torque MRAM having perpendicular magnetization with oxide interface 有权
自旋转矩MRAM具有垂直磁化与氧化物界面

Spin torque MRAM having perpendicular magnetization with oxide interface
Abstract:
A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.
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