Invention Grant
US09105839B2 Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
有权
具有偏移单元的垂直自旋转移转矩存储器（STTM）器件及其形成方法
- Patent Title: Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
- Patent Title (中): 具有偏移单元的垂直自旋转移转矩存储器（STTM）器件及其形成方法
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Application No.: US14333180Application Date: 2014-07-16
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Publication No.: US09105839B2Publication Date: 2015-08-11
- Inventor: Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
- Applicant: Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L29/82 ; H01L43/08 ; H01L27/22
Abstract:
Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
Public/Granted literature
- US20140329337A1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME Public/Granted day:2014-11-06
Information query
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