发明授权
US09117764B2 Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
有权
蚀刻方法，基板处理方法，图案形成方法，半导体元件的制造方法以及半导体元件
- 专利标题： Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
- 专利标题（中）： 蚀刻方法，基板处理方法，图案形成方法，半导体元件的制造方法以及半导体元件
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申请号： US13819038申请日： 2011-07-29
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公开(公告)号： US09117764B2公开(公告)日： 2015-08-25
- 发明人: Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
- 申请人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Rothwell, Figg, Ernst & Manbeck, P.C.
- 优先权： JP2010-190944 20100827
- 国际申请： PCT/JP2011/067452 WO 20110729
- 国际公布： WO2012/026286 WO 20120301
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/308 ; H01J37/32 ; H01L21/02 ; H01L21/027 ; H01L21/311 ; G03F7/004 ; G03F7/075 ; G03F7/09 ; G03F7/20
摘要：
A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
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