公开(公告)号：US09117764B2

公开(公告)日：2015-08-25

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

摘要翻译： 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US20130157468A1

公开(公告)日：2013-06-20

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20100279512A1

公开(公告)日：2010-11-04

申请号：US12743047

申请日：2008-10-30

申请人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

摘要： A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region.

摘要翻译： 等离子体处理装置包括：天线单元，用于通过使用微波作为等离子体源来产生等离子体，使得等离子体的电子温度相对较高的第一区域和具有比第一区域更低的等离子体电子温度的第二区域 形成在腔室中，第一布置装置，用于在第一区域中布置半导体衬底W;第二布置装置，用于将半导体衬底布置在第二区域;以及等离子体产生停止装置，用于停止产生等离子体的等离子体 同时半导体衬底被布置在第二区域中。

公开(公告)号：US20070000612A1

公开(公告)日：2007-01-04

申请号：US10569378

申请日：2004-08-26

申请人： Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67167 ,  H01L21/67173 ,  H01L21/67742 ,  Y10S414/139

摘要： A substrate processing apparatus includes a plurality of process chambers (20) for applying a process to substrate accommodated therein and a conveyance case (24) that conveys the accommodated substrates to the process chambers (20) and a transfer mechanism that moves the conveyance case (24) along a moving path. The conveyance case accommodates the substrates in an isolated state from an external atmosphere. The plurality of process chambers (20) are arranged in an aligned state on both sides of a moving path of the conveyance case (24). The conveyance case (24) has two conveyance ports (24a) in response to conveyance ports (20a) of the process chambers (20) arranged in alignment in two rows.

摘要翻译： 一种基板处理装置，包括：多个处理室，用于对容纳在其中的基板进行处理;以及传送箱，其将所容纳的基板输送到处理室;以及传送机构， 24）沿着移动路径。 输送箱容纳基板处于与外部气氛隔离的状态。 多个处理室（20）在输送箱（24）的移动路径的两侧以排列状态布置。 输送箱（24）响应于排列成两列排列的处理室（20）的输送口（20a），具有两个输送口（24a）。

公开(公告)号：US08124523B2

公开(公告)日：2012-02-28

申请号：US12531519

申请日：2008-03-28

申请人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/3213 ,  H01L23/485

CPC分类号： H01L21/31144 ,  C23C16/26 ,  H01L21/02074 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76808 ,  H01L21/76883 ,  Y10S438/951

摘要： A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。

公开(公告)号：US20110318919A1

公开(公告)日：2011-12-29

申请号：US13138242

申请日：2010-01-22

申请人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

发明人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

IPC分类号： H01L21/768 ,  H01L21/263

CPC分类号： H01L21/32051 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/2855 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76864

摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。 绝缘层包括碳氟化合物（CFx）膜。 在退火步骤之后通过高温溅射工艺形成阻挡层。

公开(公告)号：US20110074013A1

公开(公告)日：2011-03-31

申请号：US12992209

申请日：2009-05-11

申请人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Ueda ,  Yoshinobu Tanaka ,  Yusuke Ohsawa ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/31 ,  C01B33/113 ,  H01L23/48

CPC分类号： H01L21/76224 ,  C23C16/402 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/28273 ,  H01L21/31612

摘要： A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.

摘要翻译： 将硅化合物气体，氧化气体和稀有气体供给到等离子体处理装置（1）的室（2）中。 微波供应到室（2）中，并且在目标衬底上用微波产生的等离子体形成氧化硅膜。 稀有气体的分压比为硅化合物气体，氧化气体和稀有气体的总气体压力的10％以上，硅化合物气体和氧化气体的有效流量比（氧化气体 /硅化合物气体）不小于3但不大于11。

公开(公告)号：US20090026588A1

公开(公告)日：2009-01-29

申请号：US12005683

申请日：2007-12-28

申请人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： C23C16/45574 ,  C23C16/36 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3148 ,  H01L21/3185

摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a·2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

摘要翻译： 一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。 用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a为计数数，b为满足式“b = 2×2a “），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

公开(公告)号：US20100216300A1

公开(公告)日：2010-08-26

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。