Improved mask layout patterns are described for closely spaced primitives in phase shift photolithography masks. In one example, at least a portion of a photolithography mask layout is decomposed into primitives. Jogs are identified from among the primitives, the jogs being characterized by three adjacent corners. E-fields are determined for the identified jogs and are applied to synthesize an electric field at a substrate. The mask layout is corrected using the synthesized electric field and a printed wafer pattern is calculated.