Invention Grant
- Patent Title: Method for fabricating shallow trench isolation structure
- Patent Title (中): 浅沟槽隔离结构的制造方法
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Application No.: US14085811Application Date: 2013-11-21
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Publication No.: US09130014B2Publication Date: 2015-09-08
- Inventor: Keng-Jen Lin , Yu-Ren Wang , Chien-Liang Lin , Tsuo-Wen Lu , Wei-Jen Chen , Chih-Chung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02
Abstract:
A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.
Public/Granted literature
- US20150140780A1 METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION STRUCTURE Public/Granted day:2015-05-21
Information query
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