发明授权
- 专利标题： Magnetoresistive device having semiconductor substrate and preparation method therefor
- 专利标题（中）： 具有半导体衬底的磁阻器件及其制备方法
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申请号： US14111683申请日： 2012-04-11
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公开(公告)号： US09130142B2公开(公告)日： 2015-09-08
- 发明人: Xiaozhong Zhang , Caihua Wan , Xili Gao , Jimin Wang , Lihua Wu
- 申请人： Xiaozhong Zhang , Caihua Wan , Xili Gao , Jimin Wang , Lihua Wu
- 申请人地址： CN Beijing
- 专利权人： Tsinghua University
- 当前专利权人： Tsinghua University
- 当前专利权人地址： CN Beijing
- 代理机构： Reinhart Boerner Van Deuren P.C.
- 优先权： CN201110093833 20110414
- 国际申请： PCT/CN2012/073792 WO 20120411
- 国际公布： WO2012/139494 WO 20121018
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L43/12
摘要：
The present invention relates to a magnetoresistance device using a semiconductor substrate and a method for manufacturing the same. The magnetoresistance device includes: a semiconductor substrate; an oxidation layer disposed on a surface of the semiconductor substrate; electrodes disposed on the oxidation layer; and at least one diode connected between at least two of the electrodes. The magnetoresistance device of the present invention has excellent performances of a high field magnetoresistance characteristic and high sensitivity at low magnetic field, and has advantages of low power consumption, simple device structure, low cost and simple manufacturing process.
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