Invention Grant
- Patent Title: Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
- Patent Title (中): 具有插入层的磁结和使用磁结的磁存储器
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Application No.: US14048329Application Date: 2013-10-08
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Publication No.: US09130155B2Publication Date: 2015-09-08
- Inventor: Roman Chepulskyy , Xueti Tang , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G11C11/16 ; H01L43/10 ; H01L43/12

Abstract:
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.
Public/Granted literature
- US20140264671A1 MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS Public/Granted day:2014-09-18
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