A magnetic random access memory includes multiple gate lines that are divided into a first gate line group and a second gate line group and arranged to be parallel to one another; multiple magnetic random access memory cells that are bonded to the gate lines in a direction intersected with the gate lines, respectively; multiple source lines that are bonded to one ends of switching devices included in the magnetic random access memory cells and arranged to be parallel to one another; and multiple bit lines that are bonded to one ends of magnetic tunnel junction devices included in the magnetic random access memory cells and arranged to be parallel to one another.