公开(公告)号：US09135959B2

公开(公告)日：2015-09-15

申请号：US13859132

申请日：2013-04-09

Applicant: EWHA UNIVERSITY—INDUSTRY COLLABORATION FOUNDATION

Inventor： Hyung Soon Shin

IPC: G11C11/00 ,  G11C5/08 ,  G11C11/16 ,  G11C5/06 ,  H01L27/22

CPC classification number: G11C5/08 ,  G11C5/063 ,  G11C11/1659 ,  H01L27/228

Abstract: A magnetic random access memory includes multiple gate lines that are divided into a first gate line group and a second gate line group and arranged to be parallel to one another; multiple magnetic random access memory cells that are bonded to the gate lines in a direction intersected with the gate lines, respectively; multiple source lines that are bonded to one ends of switching devices included in the magnetic random access memory cells and arranged to be parallel to one another; and multiple bit lines that are bonded to one ends of magnetic tunnel junction devices included in the magnetic random access memory cells and arranged to be parallel to one another.

Abstract translation: 磁性随机存取存储器包括被分成第一栅极线组和第二栅极线组并被布置为彼此平行的多个栅极线; 分别在与栅极线相交的方向上结合到栅极线的多个磁性随机存取存储器单元; 多个源极线结合到包括在磁性随机存取存储器单元中的开关器件的一端并​​被布置为彼此平行; 以及多个位线，其被结合到包括在磁性随机存取存储器单元中的磁性隧道结器件的一端并​​被布置为彼此平行。