Invention Grant
US09135994B2 Nonvolatile memory device having read circuits for performing Read-While-Write (RWW) operation and Read-Modify-Write (RMW) operation
有权
具有用于执行读写（RWW）操作和读取 - 修改 - 写入（RMW）操作的读取电路的非易失性存储器件
- Patent Title: Nonvolatile memory device having read circuits for performing Read-While-Write (RWW) operation and Read-Modify-Write (RMW) operation
- Patent Title (中): 具有用于执行读写（RWW）操作和读取 - 修改 - 写入（RMW）操作的读取电路的非易失性存储器件
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Application No.: US14171873Application Date: 2014-02-04
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Publication No.: US09135994B2Publication Date: 2015-09-15
- Inventor: Hyo-Jin Kwon , Hoi-Ju Chung , Chae-Hoon Kim , Yong-Jin Kwon , Eun-Hye Park , Yong-Jun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0023007 20130304
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C13/00
Abstract:
A nonvolatile memory device includes a memory array having multiple nonvolatile memory cells, a first read circuit and a second read circuit. The first read circuit is configured to read first data from the memory array during a first read operation and to provide one or more protection signals indicating a victim period during the first read operation. The second read circuit is configured to read second data from the memory array during a second read operation and to provide one or more check signals indicating an aggressor period during the second read operation.
Public/Granted literature
- US20140247646A1 NONVOLATILE MEMORY DEVICE HAVING MULTIPLE READ CIRCUITS AND USING VARIABLE RESISTIVE MATERIALS Public/Granted day:2014-09-04
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