Invention Grant
- Patent Title: Manganese metal film forming method, processing system, electronic device manufacturing method and electronic device
- Patent Title (中): 锰金属成膜方法，加工系统，电子器件制造方法和电子器件
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Application No.: US14140889Application Date: 2013-12-26
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Publication No.: US09136132B2Publication Date: 2015-09-15
- Inventor: Kenji Matsumoto , Peng Chang
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-285442 20121227; JP2013-250958 20131204
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/285 ; H01L23/532 ; H01L21/67 ; H01L21/768 ; C23C16/18 ; C23C16/40
Abstract:
A manganese metal film forming method includes: degassing an underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes introducing a gas containing an oxidizing agent to form a partially-oxidized manganese metal film.
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