Invention Grant
- Patent Title: Magnetic memory devices
- Patent Title (中): 磁存储器件
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Application No.: US14492419Application Date: 2014-09-22
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Publication No.: US09142757B2Publication Date: 2015-09-22
- Inventor: Jongchul Park , Hyungjoon Kwon , Joonkyu Rhee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP.
- Priority: KR10-2014-0002405 20140108
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08

Abstract:
A magnetic memory device may include a lower electrode on a substrate, a memory element on the lower electrode, an upper electrode on the memory element, and a protection spacer enclosing a portion of a side surface of the lower electrode and protruding laterally from the side surface of the lower electrode. The protection spacer may have a bottom surface that is positioned at a level higher than that of a bottom surface of the lower electrode.
Public/Granted literature
- US20150194595A1 MAGNETIC MEMORY DEVICES Public/Granted day:2015-07-09
Information query
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