发明授权
- 专利标题： Method of forming via hole
- 专利标题（中）： 形成通孔的方法
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申请号： US14541148申请日： 2014-11-14
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公开(公告)号： US09147601B2公开(公告)日： 2015-09-29
- 发明人: Cheng-Han Wu , Chun-Chi Yu
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/302 ; H01L21/768 ; H01L21/3213 ; H01L21/033 ; H01L21/027
摘要：
The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned layer is formed on the blocking layer such that a sidewall of the blocking layer is completely covered by the patterned layer. The patterned layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area.
公开/授权文献
- US20150072529A1 METHOD OF FORMING VIA HOLE 公开/授权日：2015-03-12
信息查询
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