Invention Grant
- Patent Title: Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure
- Patent Title (中): 形成半导体器件结构的平面的方法以及形成半导体器件结构的相关方法
-
Application No.: US13712635Application Date: 2012-12-12
-
Publication No.: US09153451B2Publication Date: 2015-10-06
- Inventor: Andrew Dennis Watson Carswell , Wayne Hai-Wei Huang , Siddartha Kondoju , Jin Lu , Suresh Ramakrishnan , Kozaburo Sakai , Sony Varghese , Andrey V. Zagrebelny
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/306 ; H01L21/3105 ; H01L21/321
Abstract:
A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
Public/Granted literature
Information query
IPC分类:
