发明授权
- 专利标题: Integrated inductor structure and method of fabrication
- 专利标题(中): 集成电感器结构及其制造方法
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申请号: US12428430申请日: 2009-04-22
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公开(公告)号: US09153547B2公开(公告)日: 2015-10-06
- 发明人: Ankur Mohan Crawford , Henning Braunisch , Rajendran Nair , Gilroy Vandentop , Shan X. Wang
- 申请人: Ankur Mohan Crawford , Henning Braunisch , Rajendran Nair , Gilroy Vandentop , Shan X. Wang
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01F5/00
- IPC分类号: H01F5/00 ; H01F27/28 ; H01L27/08 ; H01F7/06 ; H01L23/64 ; H01F17/00 ; H01F41/04 ; H01L23/498 ; H01L49/02 ; H05K1/03 ; H05K1/16 ; H05K3/46
摘要:
An inductor structure comprised of a magnetic section and a single turn solenoid. The single turn solenoid to contain within a portion of the magnetic section and circumscribed by the magnetic section.
公开/授权文献
- US20090201113A1 INTEGRATED INDUCTOR STRUCTURE AND METHOD OF FABRICATION 公开/授权日:2009-08-13