发明授权
US09164834B2 Semiconductor memory devices, memory systems including the same and method of writing data in the same
有权
半导体存储器件,包括相同的存储器系统和在其中写入数据的方法
- 专利标题: Semiconductor memory devices, memory systems including the same and method of writing data in the same
- 专利标题(中): 半导体存储器件,包括相同的存储器系统和在其中写入数据的方法
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申请号: US14160614申请日: 2014-01-22
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公开(公告)号: US09164834B2公开(公告)日: 2015-10-20
- 发明人: Hoi-ju Chung , Chul-sung Park , Jae-Wook Lee , Jang-Woo Ryu , Tae-seong Jang , Gong-heum Han
- 申请人: Hoi-ju Chung , Chul-sung Park , Jae-Wook Lee , Jang-Woo Ryu , Tae-seong Jang , Gong-heum Han
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce
- 优先权: KR10-2013-0119651 20131008
- 主分类号: G06F11/10
- IPC分类号: G06F11/10 ; G06F11/08 ; G11C29/42
摘要:
In one embodiment, the semiconductor device includes a memory array and a control architecture configured to control reading data from and writing data to the memory array. The control architecture is configured to receive data and a codeword location in the memory array, select one or more data units in the received data based on a data mask, read a codeword currently stored at the codeword location in the memory array, error correct the read codeword to generate a corrected read codeword, form a new codeword from the selected data units of the received data and data units in the corrected read codeword that do not correspond to the selected data units, and write the new codeword to the memory array.