Invention Grant
US09165959B2 Image sensor with pixel units having mirrored transistor layout
有权
具有镜像晶体管布局的像素单元的图像传感器
- Patent Title: Image sensor with pixel units having mirrored transistor layout
- Patent Title (中): 具有镜像晶体管布局的像素单元的图像传感器
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Application No.: US13775747Application Date: 2013-02-25
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Publication No.: US09165959B2Publication Date: 2015-10-20
- Inventor: Gang Chen , Duli Mao , Hsin-Chih Tai
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region.
Public/Granted literature
- US20140239152A1 IMAGE SENSOR WITH PIXEL UNITS HAVING MIRRORED TRANSISTOR LAYOUT Public/Granted day:2014-08-28
Information query
IPC分类:
