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    DUAL-FACING CAMERA ASSEMBLY
    2.
    发明申请
    DUAL-FACING CAMERA ASSEMBLY 审中-公开
    双面相机组件

    公开(公告)号：US20150054106A1

    公开(公告)日：2015-02-26

    申请号：US14528991

    申请日：2014-10-30

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

    Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

    Abstract translation: 本发明的实施例涉及一种照相机组件，其包括背面照相机和可操作地耦合在一起的例如相机（例如，粘合的，堆叠在公共衬底上）的前置照相机。 在本发明的一些实施例中，具有前侧照明（FSI）成像像素阵列的系统被结合到具有背面照明（BSI）成像像素阵列的系统，从而产生具有最小尺寸的照相机组件（例如，减小的 厚度与现有技术的解决方案相比）。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片，当其变薄时，从而减小整个相机模块的厚度。 根据本发明的其它实施例，两个封装管芯，一个BSI图像传感器，另一个是FSI图像传感器，堆叠在诸如印刷电路板的公共基板上，并且通过再分配层可操作地耦合在一起。

    Color filter including clear pixel and hard mask
    3.
    发明授权
    Color filter including clear pixel and hard mask 有权
    滤色片包括透明像素和硬掩模

    公开(公告)号：US08941159B2

    公开(公告)日：2015-01-27

    申请号：US13754465

    申请日：2013-01-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L21/02 ,  H01L27/146 ,  G02B5/20 ,  G02B1/10

    CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

    Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

    Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

    Process to eliminate lag in pixels having a plasma-doped pinning layer
    4.
    发明授权
    Process to eliminate lag in pixels having a plasma-doped pinning layer 有权
    消除具有等离子体掺杂钉扎层的像素滞后的过程

    公开(公告)号：US08921187B2

    公开(公告)日：2014-12-30

    申请号：US13777197

    申请日：2013-02-26

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

    Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

    Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

    Dual-facing camera assembly
    5.
    发明授权
    Dual-facing camera assembly 有权
    双面相机组合

    公开(公告)号：US08900912B2

    公开(公告)日：2014-12-02

    申请号：US13927495

    申请日：2013-06-26

    Applicant: Omnivision Technologies, Inc.

    Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

    Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

    Abstract translation: 本发明的实施例涉及一种照相机组件，其包括背面照相机和可操作地耦合在一起的例如相机（例如，粘合的，堆叠在公共衬底上）的前置照相机。 在本发明的一些实施例中，具有前侧照明（FSI）成像像素阵列的系统被结合到具有背面照明（BSI）成像像素阵列的系统，从而产生具有最小尺寸的照相机组件（例如，减小的 厚度与现有技术的解决方案相比）。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片，当其变薄时，从而减小整个相机模块的厚度。 根据本发明的其它实施例，两个封装管芯，一个BSI图像传感器，另一个是FSI图像传感器，堆叠在诸如印刷电路板的公共基板上，并且通过再分配层可操作地耦合在一起。

    IMAGE SENSOR PIXEL CELL WITH GLOBAL SHUTTER HAVING NARROW SPACING BETWEEN GATES
    6.
    发明申请
    IMAGE SENSOR PIXEL CELL WITH GLOBAL SHUTTER HAVING NARROW SPACING BETWEEN GATES 审中-公开
    图像传感器像素单元，具有在门之间的窄间隔的全球快门

    公开(公告)号：US20140346572A1

    公开(公告)日：2014-11-27

    申请号：US14333767

    申请日：2014-07-17

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

    IPC: H01L27/148

    CPC classification number: H01L27/14812 ,  H01L27/14614 ,  H01L27/14689 ,  H01L27/14806 ,  H01L31/18

    Abstract: A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively.

    Abstract translation: 像素单元包括设置在半导体衬底中的光电二极管，存储晶体管，传输晶体管和输出晶体管。 转移晶体管将从光电二极管累积的图像电荷选择性地转移到存储晶体管。 输出晶体管将图像电荷从存储晶体管选择性地传输到读出节点。 第一隔离栅栏设置在半导体衬底上，用于将转移晶体管的转移栅极与存储晶体管的存储栅极分开。 第二隔离栅栏设置在半导体衬底上，以将存储栅极与输出晶体管的输出栅极分离。 第一和第二隔离栅栏的厚度分别基本上等于传输栅极和存储栅极之间以及存储栅极和输出栅极之间的间隔距离。

    IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION
    7.
    发明申请
    IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION 有权
    具有金属接触的图像传感器通过具有隔离区域的接触蚀刻停止层

    公开(公告)号：US20140299957A1

    公开(公告)日：2014-10-09

    申请号：US13858754

    申请日：2013-04-08

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

    Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

    Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

    CIRCUIT STRUCTURE FOR PROVIDING CONVERSION GAIN OF A PIXEL ARRAY
    8.
    发明申请
    CIRCUIT STRUCTURE FOR PROVIDING CONVERSION GAIN OF A PIXEL ARRAY 有权
    提供像素阵列转换增益的电路结构

    公开(公告)号：US20140231622A1

    公开(公告)日：2014-08-21

    申请号：US13773437

    申请日：2013-02-21

    Applicant: OmniVision Technologies, Inc.

    Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Hsin-Chih Tai ,  Howard Rhodes

    IPC: H04N5/335

    CPC classification number: H04N5/3559 ,  H01L27/14601 ,  H04N5/355 ,  H04N5/52

    Abstract: Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—a supply voltage. In another embodiment, the conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—sample and hold circuitry.

    Abstract translation: 像素阵列的技术和机制提供一个转换增益水平。 在一个实施例中，像素阵列包括转换增益控制电路，以在不同的时间针对不同的操作模式进行选择性地配置，每个模式用于实现相应的转换增益。 转换增益控制电路选择性地提供像素单元与像素单元与电源电压的 - 和/或开关去耦合的切换耦合。 在另一个实施例中，转换增益控制电路选择性地提供像素单元与采样和保持电路的 - 和/或开关去耦合的切换耦合。

    Method of forming dual size microlenses for image sensors
    9.
    发明授权
    Method of forming dual size microlenses for image sensors 有权
    形成图像传感器双尺寸微透镜的方法

    公开(公告)号：US09372286B2

    公开(公告)日：2016-06-21

    申请号：US13860859

    申请日：2013-04-11

    Applicant: OmniVision Technologies, Inc.

    Inventor： Jin Li ,  Gang Chen ,  Yin Qian ,  Hsin-Chih Tai

    IPC: B05D1/00 ,  G02B3/00 ,  B29D11/00

    CPC classification number: G02B3/0018 ,  B05D1/005 ,  B29D11/00365 ,  B29D11/00384 ,  B29D11/00451 ,  G02B3/0043

    Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

    Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙，以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

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