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US09166109B2 Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure 有权
半导体发光元件和具有设置在第二电极结构的第二焊盘电极下方的第一电极结构的导电通孔的发光器件

Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure
Abstract:
A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
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