公开(公告)号：US09099629B2

公开(公告)日：2015-08-04

申请号：US13929431

申请日：2013-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Yang ,  Yong Il Kim ,  Kwang Min Song ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong

IPC: H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。

公开(公告)号：US09324904B2

公开(公告)日：2016-04-26

申请号：US14817750

申请日：2015-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Yang ,  Yong Il Kim ,  Kwang Min Song ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

公开(公告)号：US09166109B2

公开(公告)日：2015-10-20

申请号：US13900268

申请日：2013-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Yang ,  Tae Hyung Kim ,  Kwang Min Song ,  Seung Hwan Lee ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong ,  Su Min Hwangbo

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Abstract translation: 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。