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公开(公告)号：US20180175261A1
公开(公告)日：2018-06-21
申请号：US15617669
申请日：2017-06-08
发明人： Hanul Yoo , Yong ll Kim , Sung Hyun Sim , Wan Tae Lim , Hye Seok Noh , Ji Hye Yeon
IPC分类号： H01L33/58 , H01L33/06 , H01L33/32 , H01L33/22 , H01L33/12 , H01L33/50 , H01L33/40 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/46 , H01L33/501 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
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公开(公告)号：US09966369B2
公开(公告)日：2018-05-08
申请号：US15802493
申请日：2017-11-03
发明人： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC分类号： H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
摘要： A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US10566382B2
公开(公告)日：2020-02-18
申请号：US15788933
申请日：2017-10-20
发明人： Ji Hye Yeon , Han Kyu Seong , Wan Tae Lim , Sung Hyun Sim , Hanul Yoo
摘要： A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
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公开(公告)号：US10553641B2
公开(公告)日：2020-02-04
申请号：US15933967
申请日：2018-03-23
发明人： Ji Hye Yeon , Sung Hyun Sim , Wan Tae Lim , Yong Il Kim , Hanul Yoo
摘要： A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号：US10326061B2
公开(公告)日：2019-06-18
申请号：US15486982
申请日：2017-04-13
发明人： Wan Tae Lim , Sung Hyun Sim , Hanul Yoo , Yong Il Kim , Hye Seok Noh , Ji Hye Yeon
摘要： A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US10230021B2
公开(公告)日：2019-03-12
申请号：US15279864
申请日：2016-09-29
发明人： Yong Il Kim , Hyong Sik Won , Wan Tae Lim , Nam Goo Cha
IPC分类号： H01L33/50 , H01L33/08 , H01L33/32 , H01L25/075 , H01L33/44 , H01L33/38 , H01L33/58 , H01L27/15
摘要： A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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公开(公告)号：US10566502B2
公开(公告)日：2020-02-18
申请号：US15171087
申请日：2016-06-02
发明人： Kyung Wook Hwang , Si Han Kim , Wan Tae Lim , Eun Joo Shin
IPC分类号： H01L33/46 , H01L33/32 , H01L33/58 , H01L33/42 , H01L33/50 , H01L33/56 , H01L33/06 , H01L33/22
摘要： A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.
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8.发明授权公开(公告)号：US09553234B2
公开(公告)日：2017-01-24
申请号：US14607920
申请日：2015-01-28
发明人： Nam Goo Cha , Ki Hyung Lee , Wan Tae Lim , Geun Woo Ko , Min Wook Choi
CPC分类号： H01L33/24 , F21K9/232 , F21S41/147 , F21S41/192 , F21Y2101/00 , F21Y2115/10 , H01L33/08 , H01L33/18 , H01L33/22 , H01L2224/16245 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.
摘要翻译： 制造纳米结构半导体发光器件的方法可以包括通过在由第一导电型半导体构成的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层，形成穿过掩模层的多个开口 在所述多个开口中生长多个纳米棒，去除所述第二绝缘层，通过重新生长所述多个纳米棒来制备多个纳米孔，以及通过依次生长活性层和第二导电类型形成纳米尺度的发光结构 半导体层在多个纳米孔的表面上。 多个开口可以分别包括位于第二绝缘层中的模具区域，并且模具区域包括至少一个弯曲部分，其侧表面的倾斜度根据与第一绝缘层的接近度而变化。
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公开(公告)号：US09324904B2
公开(公告)日：2016-04-26
申请号：US14817750
申请日：2015-08-04
发明人： Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
CPC分类号： H01L33/0075 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2224/16 , H01L2933/0016
摘要： A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
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10.发明授权Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure 有权半导体发光元件和具有设置在第二电极结构的第二焊盘电极下方的第一电极结构的导电通孔的发光器件公开(公告)号：US09166109B2
公开(公告)日：2015-10-20
申请号：US13900268
申请日：2013-05-22
发明人： Jong In Yang , Tae Hyung Kim , Kwang Min Song , Seung Hwan Lee , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong , Su Min Hwangbo
CPC分类号： H01L33/382 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
摘要翻译： 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。
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