Invention Grant
US09171121B2 Method, structure, and design structure for a through-silicon-via Wilkinson power divider
有权
通过硅片通过威尔金森功率分配器的方法，结构和设计结构
- Patent Title: Method, structure, and design structure for a through-silicon-via Wilkinson power divider
- Patent Title (中): 通过硅片通过威尔金森功率分配器的方法，结构和设计结构
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Application No.: US13763136Application Date: 2013-02-08
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Publication No.: US09171121B2Publication Date: 2015-10-27
- Inventor: Hanyi Ding , Alvin J. Joseph , Wayne H. Woods, Jr.
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Hopewell Junction
- Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee: GLOBALFOUNDRIES U.S. 2 LLC
- Current Assignee Address: US NY Hopewell Junction
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Andrew M. Calderon
- Main IPC: H01L21/20
- IPC: H01L21/20 ; G06F17/50 ; H01L23/48 ; H01P5/16 ; H01P11/00
Abstract:
A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.
Public/Granted literature
- US20130159957A1 METHOD, STRUCTURE, AND DESIGN STRUCTURE FOR A THROUGH-SILICON-VIA WILKINSON POWER DIVIDER Public/Granted day:2013-06-20
Information query
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