Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14488707Application Date: 2014-09-17
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Publication No.: US09171825B2Publication Date: 2015-10-27
- Inventor: Sang-Sick Park , In-Young Lee , Byoung-Soo Kwak , Min-Soo Kim , Sang-Wook Park , Tae-Je Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Ellsworth IP Group PLLC
- Priority: KR10-2013-0138448 20131114
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L23/36 ; H01L23/498

Abstract:
A semiconductor device and a method of fabricating the same includes providing a first semiconductor chip which has first connection terminals, providing a second semiconductor chip which comprises top and bottom surfaces facing each other and has second connection terminals and a film-type first underfill material formed on the bottom surface thereof, bonding the first semiconductor chip to a mounting substrate by using the first connection terminals, bonding the first semiconductor chip and the second semiconductor chip by using the first underfill material, and forming a second underfill material which fills a space between the mounting substrate and the first semiconductor chip and covers side surfaces of the first semiconductor chip and at least part of side surfaces of the second semiconductor chip.
Public/Granted literature
- US20150130083A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-05-14
Information query
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