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US09177784B2 Semiconductor device dielectric interface layer 有权
半导体器件介电界面层

Semiconductor device dielectric interface layer
Abstract:
Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
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