Invention Grant
- Patent Title: Semiconductor device dielectric interface layer
- Patent Title (中): 半导体器件介电界面层
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Application No.: US14183187Application Date: 2014-02-18
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Publication No.: US09177784B2Publication Date: 2015-11-03
- Inventor: Petri Raisanen , Michael Givens , Mohith Verghese
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holdings B.V.
- Current Assignee: ASM IP Holdings B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/336 ; H01L21/31 ; H01L21/66 ; H01L21/02 ; H01L29/51 ; H01L29/78 ; H01L21/28

Abstract:
Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
Public/Granted literature
- US20140159170A1 SEMICONDUCTOR DEVICE DIELECTRIC INTERFACE LAYER Public/Granted day:2014-06-12
Information query
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