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公开(公告)号:US20240209501A1
公开(公告)日:2024-06-27
申请号:US18596144
申请日:2024-03-05
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Eric James Shero , Carl Louis White , Kyle Fondurulia , Herbert Terhorst
IPC: C23C16/448 , C23C16/455
CPC classification number: C23C16/4481 , C23C16/45544
Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
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公开(公告)号:US11377732B2
公开(公告)日:2022-07-05
申请号:US16926493
申请日:2020-07-10
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Eric James Shero , Carl Louis White , Kyle Fondurulia
IPC: C23C16/448
Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
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公开(公告)号:US20160097121A1
公开(公告)日:2016-04-07
申请号:US14966335
申请日:2015-12-11
Applicant: ASM IP HOLDING B.V.
Inventor: Christophe Pomarede , Eric Shero , Mohith Verghese , Jan Willem Maes , Chang-Gong Wang
IPC: C23C16/455 , H01L21/02 , H01L27/108
CPC classification number: C23C16/45525 , C23C14/246 , C23C16/045 , C23C16/448 , C23C16/4482 , C23C16/4485 , C23C16/4486 , C23C16/45527 , C23C16/45561 , C23C16/52 , F17C2205/0142 , F17C2205/0146 , F17C2270/0518 , H01J37/32449 , H01L21/02148 , H01L21/02172 , H01L21/02181 , H01L21/0228 , H01L21/28194 , H01L21/3142 , H01L21/31645 , H01L27/10861
Abstract: A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.
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公开(公告)号:US20140159170A1
公开(公告)日:2014-06-12
申请号:US14183187
申请日:2014-02-18
Applicant: ASM IP Holding B.V.
Inventor: Petri Raisanen , Michael Givens , Mohith Verghese
CPC classification number: H01L21/02233 , H01L21/0214 , H01L21/02164 , H01L21/02172 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/0223 , H01L21/02236 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/0228 , H01L21/02304 , H01L21/02315 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L22/12 , H01L22/20 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/517
Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
Abstract translation: 提供了与在衬底上形成膜堆叠的方法相关的实施例。 一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。 该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料,而不将基板暴露于空气断裂。
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公开(公告)号:US11742189B2
公开(公告)日:2023-08-29
申请号:US16251534
申请日:2019-01-18
Applicant: ASM IP Holding B.V.
Inventor: Carl Louis White , Mohith Verghese , Eric James Shero , Todd Robert Dunn
IPC: H01J37/32
CPC classification number: H01J37/32899 , H01J37/3244 , H01J37/32513 , H01J37/32715 , H01J37/32733
Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
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公开(公告)号:US20200340109A1
公开(公告)日:2020-10-29
申请号:US16926493
申请日:2020-07-10
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Eric James Shero , Carl Louis White , Kyle Fondurulia
IPC: C23C16/448
Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
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7.
公开(公告)号:US20190276934A1
公开(公告)日:2019-09-12
申请号:US15917224
申请日:2018-03-09
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Todd Dunn , John Kevin Shugrue
IPC: C23C16/455 , C23C16/46 , C23C16/52
Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.
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公开(公告)号:US10529542B2
公开(公告)日:2020-01-07
申请号:US14645234
申请日:2015-03-11
Applicant: ASM IP Holding B.V.
Inventor: Carl Louis White , Eric James Shero , Mohith Verghese
IPC: H01J37/32 , C23C16/455 , B08B7/00 , C23C16/458
Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
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公开(公告)号:US11926894B2
公开(公告)日:2024-03-12
申请号:US15585540
申请日:2017-05-03
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Eric James Shero , Carl Louis White , Kyle Fondurulia , Herbert Terhorst
IPC: C23C16/44 , C23C16/448 , C23C16/455
CPC classification number: C23C16/4481 , C23C16/45544
Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
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公开(公告)号:US20180094351A1
公开(公告)日:2018-04-05
申请号:US15585540
申请日:2017-05-03
Applicant: ASM IP Holding B.V.
Inventor: Mohith Verghese , Eric James Shero , Carl Louis White , Kyle Fondurulia , Herbert Terhorst
IPC: C23C16/448 , C23C16/455
CPC classification number: C23C16/4481 , C23C16/45544
Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
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