公开(公告)号：US11926895B2

公开(公告)日：2024-03-12

申请号：US17583371

申请日：2022-01-25

申请人： ASM IP Holding B.V.

发明人： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC分类号： C23C16/455 ,  C23C16/32 ,  H01L21/28 ,  H01L29/49

CPC分类号： C23C16/45525 ,  C23C16/32 ,  H01L21/28088 ,  H01L29/49 ,  H01L29/4966

摘要： Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

申请人： ASM IP Holding B.V.

发明人： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC分类号： G03F7/11 ,  G03F7/16

摘要： Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.

公开(公告)号：US20230032495A1

公开(公告)日：2023-02-02

申请号：US17872054

申请日：2022-07-25

申请人： ASM IP Holding B.V.

发明人： Varun Sharma ,  Michael Givens

IPC分类号： H01L21/3065 ,  H01L21/67

摘要： The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.

公开(公告)号：US20220084817A1

公开(公告)日：2022-03-17

申请号：US17472981

申请日：2021-09-13

申请人： ASM IP Holding B.V.

发明人： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC分类号： H01L21/02

摘要： The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US10458018B2

公开(公告)日：2019-10-29

申请号：US14752712

申请日：2015-06-26

申请人： ASM IP Holding B.V.

发明人： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC分类号： C23C16/455 ,  H01L29/49 ,  C23C16/32

摘要： Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20160240373A1

公开(公告)日：2016-08-18

申请号：US14621174

申请日：2015-02-12

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Michael Givens ,  Qi Xie ,  Jan Willem Maes ,  Bert Jongbloed ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken ,  Dieter Pierreux ,  Werner Knaepen ,  Harald B. Profijt ,  Cornelius A. van der Jeugd

IPC分类号： H01L21/02

CPC分类号： H01L21/02236 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02238

摘要： In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

摘要翻译： 在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3）。 在一些实施例中，另一层材料直接沉积在氧化物层上。 例如，介电层可以直接沉积在氧化物层上。

公开(公告)号：US09245742B2

公开(公告)日：2016-01-26

申请号：US14133509

申请日：2013-12-18

申请人： ASM IP HOLDING B.V.

发明人： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC分类号： H01L21/31 ,  H01L21/02

CPC分类号： H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

摘要： In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

摘要翻译： 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在衬底表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：US20220181163A1

公开(公告)日：2022-06-09

申请号：US17457764

申请日：2021-12-06

申请人： ASM IP HOLDING B.V.

发明人： Andrea Illiberi ,  Varun Sharma ,  Michael Givens ,  Marko Tuominen ,  Shaoren Deng

IPC分类号： H01L21/311 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56

摘要： The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.

公开(公告)号：US09711350B2

公开(公告)日：2017-07-18

申请号：US14729510

申请日：2015-06-03

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Fu Tang ,  Michael Givens ,  Petri Raisanen ,  Jan Willem Maes

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/10 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L21/02247 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/2807 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/518

摘要： In some embodiments, a semiconductor surface having a high mobility semiconductor may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

公开(公告)号：US20160358835A1

公开(公告)日：2016-12-08

申请号：US15169430

申请日：2016-05-31

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Fu Tang ,  Michael Givens ,  Petri Raisanen ,  Jan Willem Maes ,  Xiaoqiang Jiang

IPC分类号： H01L23/31 ,  H01L29/161 ,  H01L29/51 ,  C23C16/52 ,  H01L21/02 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  H01L29/10 ,  H01L21/28

CPC分类号： H01L23/3171 ,  C23C16/0218 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02112 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/28255 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

摘要翻译： 在一些实施方案中，可以通过氮化，优选使用肼，肼衍生物或其组合来有效地钝化半导体表面。 该表面可以是晶体管沟道区的半导体表面。 在一些实施方案中，将天然氧化物从半导体表面上除去，随后将表面氮化。 在一些其它实施例中，在半导体表面形成半导体表面氧化物层，并且通过在表面形成半导体氮氧化物层来实现钝化，其中氮化对表面氧化物产生氮以形成氧氮化物层。 半导体氧化物层可以通过原子层沉积（ALD）沉积，并且氮化也可以作为ALD的一部分进行。