Invention Grant
- Patent Title: Integrated circuits separated by through-wafer trench isolation
- Patent Title (中): 通过晶圆沟槽隔离分离的集成电路
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Application No.: US14449522Application Date: 2014-08-01
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Publication No.: US09177852B2Publication Date: 2015-11-03
- Inventor: Peter Gerard Steeneken , Roel Daamen , Gerard Koops , Jan Sonsky , Evelyne Gridelet , Coenraad Cornelis Tak
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/762 ; H01L21/8238

Abstract:
An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.
Public/Granted literature
- US20140342527A1 INTEGRATED CIRCUITS SEPARATED BY THROUGH-WAFER TRENCH ISOLATION Public/Granted day:2014-11-20
Information query
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