Invention Grant
US09184052B2 Semiconductor device and manufacturing method of semiconductor device using metal oxide
有权
半导体器件及使用金属氧化物的半导体器件的制造方法
- Patent Title: Semiconductor device and manufacturing method of semiconductor device using metal oxide
- Patent Title (中): 半导体器件及使用金属氧化物的半导体器件的制造方法
-
Application No.: US13949588Application Date: 2013-07-24
-
Publication No.: US09184052B2Publication Date: 2015-11-10
- Inventor: Xianyu Wenxu , Woo-young Yang , Chang-youl Moon , Yong-young Park , Jeong-yub Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0119303 20121025; KR10-2012-0120623 20121029
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04 ; H01L29/45 ; H01L29/66 ; H01L29/786 ; H01L29/868
Abstract:
A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.
Public/Granted literature
- US20140117349A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING METAL OXIDE Public/Granted day:2014-05-01
Information query
IPC分类:
