公开(公告)号：US20160035898A1

公开(公告)日：2016-02-04

申请号：US14879423

申请日：2015-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L29/786 ,  H01L29/161 ,  H01L29/45 ,  H01L29/16 ,  H01L29/04

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶质半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US09515189B2

公开(公告)日：2016-12-06

申请号：US14879423

申请日：2015-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L21/02 ,  H01L29/66 ,  H01L29/868

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

公开(公告)号：US09299783B2

公开(公告)日：2016-03-29

申请号：US14521868

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-young Yang ,  Ki-hong Kim ,  Sang-jun Choi ,  Young-eal Kim ,  Seong-yong Park

IPC: H01L29/80 ,  H01L29/10 ,  H01L29/24 ,  H01L29/45 ,  H03K17/687

CPC classification number: H01L29/1029 ,  H01L29/24 ,  H01L29/45 ,  H01L29/80 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H03K17/687

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract translation: 晶体管包括在衬底上的沟道形成层，沟道形成层上的栅极，并且包括电化学上不同的金属，在沟道形成层和栅极之间的固体电解质层，固体电解质层形成为具有 沟道形成层上的栅极，包含电化学活性金属的活性金属层，其能够通过使用电化学活性金属的氧化还原反应来实现沟道切换，使得活性金属层在沟道区域中形成金属沟道 形成层和固体电解质层，以及与活性金属层电连接的源极和漏极。

公开(公告)号：US09184052B2

公开(公告)日：2015-11-10

申请号：US13949588

申请日：2013-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L29/868

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶质半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US09056424B2

公开(公告)日：2015-06-16

申请号：US13918066

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Jeong-yub Lee ,  Chang-youl Moon ,  Yong-young Park ,  Woo-young Yang ,  Yong-sung Kim ,  Joo-ho Lee

IPC: B44C1/17 ,  B29C65/16 ,  B32B37/26 ,  B32B38/10 ,  B32B43/00 ,  B29C67/24 ,  H01L51/00 ,  H01L51/10 ,  H01L51/44

CPC classification number: B29C67/24 ,  H01L51/0023 ,  H01L51/0045 ,  H01L51/102 ,  H01L51/442 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract translation: 转移石墨烯的方法包括在第一基板上顺序地形成牺牲层和石墨烯层，将石墨烯层粘合到目标层，以及使用激光去除牺牲层并将第一基板与石墨烯层分离。