发明授权
US09194046B2 Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use
有权
用于制造半导体氧化铟层的方法，根据所述方法制备的氧化铟层及其用途
- 专利标题： Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use
- 专利标题（中）： 用于制造半导体氧化铟层的方法，根据所述方法制备的氧化铟层及其用途
-
申请号： US13201107申请日： 2010-02-05
-
公开(公告)号： US09194046B2公开(公告)日： 2015-11-24
- 发明人: Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
- 申请人： Arne Hoppe , Alexey Merkulov , Juergen Steiger , Duy Vu Pham , Yvonne Damaschek , Heiko Thiem
- 申请人地址： DE Essen
- 专利权人： Evonik Degussa GmbH
- 当前专利权人： Evonik Degussa GmbH
- 当前专利权人地址： DE Essen
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： DE102009009337 20090217
- 国际申请： PCT/EP2010/051432 WO 20100205
- 国际公布： WO2010/094583 WO 20100826
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; H01L21/44 ; C23C18/12
摘要：
The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.
公开/授权文献
信息查询
IPC分类:
