公开(公告)号：US09978591B2

公开(公告)日：2018-05-22

申请号：US14395339

申请日：2013-03-26

申请人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

发明人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01B1/06 ,  H01B1/22

CPC分类号： H01L21/02565 ,  H01B1/06 ,  H01B1/22 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/7869

摘要： The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

公开(公告)号：US09650396B2

公开(公告)日：2017-05-16

申请号：US13809423

申请日：2011-07-12

申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01B1/00 ,  C23C16/40 ,  C23C18/12 ,  C09D1/00 ,  C07F5/00 ,  C07C31/28

CPC分类号： C07F5/003 ,  C07C31/28 ,  C09D1/00 ,  C23C18/1216

摘要： The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X═F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

公开(公告)号：US09647133B2

公开(公告)日：2017-05-09

申请号：US15036662

申请日：2014-11-13

申请人： Duy Vu Pham ,  Kuo Hui Su

发明人： Duy Vu Pham ,  Kuo Hui Su

IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L21/02 ,  H01L23/31 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02271 ,  H01L23/3171 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

公开(公告)号：US20150053966A1

公开(公告)日：2015-02-26

申请号：US14348948

申请日：2012-09-12

申请人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L29/78696 ,  C23C18/1208 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

摘要翻译： 本发明涉及一种包括第一和第二金属氧化物层以及电介质层的半导体层压体的制造方法，其中第一金属氧化物层被布置在第二金属氧化物层和电介质层之间。 第一和第二金属氧化物层相应地由第一和第二液相形成。 本发明还涉及可以从这种方法获得的半导体层压体以及包含这种半导体层压体的电子部件。

公开(公告)号：US08859332B2

公开(公告)日：2014-10-14

申请号：US13884495

申请日：2011-10-26

申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01L21/16 ,  H01L29/10 ,  H01L21/12 ,  B05D5/12 ,  H01L21/288 ,  H01L29/22 ,  C23C18/12 ,  H01L21/02 ,  H01L29/43

CPC分类号： H01L21/02628 ,  C23C18/1216 ,  H01L21/288 ,  H01L29/22 ,  H01L29/43

摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

摘要翻译： 本发明涉及一种用于生产含氧化铟的层的液相方法，其中可以从包含至少一种氧化铟前体和至少一种溶剂和/或分散介质的混合物制备的涂料组合物以点a ）至d），a）施加到基底上，b）用电磁辐射照射施加到基底上的组合物，c）任选干燥，d）热转换成含氧化铟的层，其中氧化铟前体 是通式为InX（OR）2的卤素烷氧化物，其中R是烷基和/或烷氧基烷基，X是F，Cl，Br或I，并且用具有显着部分辐射的电磁辐射进行照射 170-210nm和250-258nm的范围，与该方法可生产的含氧化铟的层及其用途。

公开(公告)号：US08841164B2

公开(公告)日：2014-09-23

申请号：US13516900

申请日：2010-11-25

申请人： Jürgen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

发明人： Jürgen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01L21/00

CPC分类号： H01L51/0032 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/125 ,  C23C18/14 ,  H01L21/02565 ,  H01L21/02628

摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

摘要翻译： 本发明涉及一种用于从非水溶液制备含氧化铟的层的液相方法，其中含有至少一种通式为InX（OR）2的卤素烷氧化物的无水组合物，其中R =烷基和/或烷氧基烷基 基团和X = F，Cl，Br或I，并且至少一种溶剂或分散介质按照a）至d）的顺序，在无水气氛中，a）施加到基材上，b）施加到 用波长＆nlE; 360nm的电磁辐射照射衬底，并且c）任选地干燥，然后d）热转换成含氧化铟的层到可通过该方法生产的层及其用途。

公开(公告)号：US08546594B2

公开(公告)日：2013-10-01

申请号：US13809322

申请日：2011-07-07

申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： C07F5/00

CPC分类号： C07F5/00 ,  C07F5/069 ,  C23C18/1216 ,  C23C18/1254

摘要： The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R′CH(O)COOR″)2(HOR)x(HNR′″2)y where X═F, Cl, Br and/or I, R═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

摘要翻译： 本发明涉及通式为In 6 O 2 X 6（OR）6（R'CH（O）COOR“）2（HOR）x（HNR”2）y的卤代铟氧代醇，其中X = F，Cl，Br 和/或I，R = C 1 -C 15 - 烷基，C 1 -C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R'= C 1 C 1 -C 15烷基，C 1 -C 15 - 烯基，C 1 -C 15炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基， C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基，C 1 -C 15 - 烯基， C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基 - 和/或C 7 -C 15 - 烷氧基芳基，x = 0至10和y = 0至10，其制备方法和用途。

公开(公告)号：US20120202318A1

公开(公告)日：2012-08-09

申请号：US13391114

申请日：2010-08-13

申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01L21/20

CPC分类号： C23C18/1216 ,  C23C18/1258

摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X═F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

摘要翻译： 本发明涉及一种从非水溶液制备含氧化铟含量层的液相方法，其中含有至少一种通式M x O y（OR）z [O（R'O）c H] aXb [R“OH] d，其中x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = M = In，R，R'，R“=有机基团，X = F，Cl，Br，I和至少一种溶剂施加到基材上，任选地干燥，并转化为含氧化铟的层， 可通过本发明方法生产的层及其用途。

公开(公告)号：US20110309313A1

公开(公告)日：2011-12-22

申请号：US13148967

申请日：2010-02-05

申请人： Juergen Steiger ,  Heiko Thiem ,  Alexey Merkulov ,  Duy Vu Pham ,  Yvonne Damaschek ,  Arne Hoppe

发明人： Juergen Steiger ,  Heiko Thiem ,  Alexey Merkulov ,  Duy Vu Pham ,  Yvonne Damaschek ,  Arne Hoppe

IPC分类号： H01B1/12

CPC分类号： C23C18/1216 ,  C23C18/125

摘要： The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.

摘要翻译： 本发明涉及含有至少一种铟醇盐和至少三种溶剂L1，L2和L3的液态含铟醇盐的组合物，其中溶剂L1选自乳酸乙酯，苯甲醚，四氢糠醇，丁基 乙酸酯，乙二醇二乙酸酯和苯甲酸乙酯，并且在SATP条件下两种溶剂L2和L3的沸点之间的差异为至少30℃，其制备方法及其用途。

公开(公告)号：US09802964B2

公开(公告)日：2017-10-31

申请号：US14900936

申请日：2014-05-15

申请人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe ,  Dennis Fruehling

发明人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe ,  Dennis Fruehling

IPC分类号： C07F5/00 ,  C23C18/12 ,  H01L21/288 ,  C23C18/14

CPC分类号： C07F5/003 ,  C07F5/00 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/288

摘要： The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.