公开(公告)号：US20160159824A1

公开(公告)日：2016-06-09

申请号：US14900936

申请日：2014-05-15

Applicant: Juergen STEIGER ,  Duy Vu PHAM ,  Anita NEUMANN ,  Alexey MERKULOV ,  Arne HOPPE ,  Dennis FRÜHLING ,  EVONIK DEGUSSA GMBH

Inventor： Juergen STEIGER ,  Duy Vu PHAM ,  Anita NEUMANN ,  Alexey MERKULOV ,  Arne HOPPE ,  Dennis FRUEHLING

IPC: C07F5/00 ,  H01L21/288

CPC classification number: C07F5/003 ,  C07F5/00 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/288

Abstract: The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X =F, Cl, Br, I with a secondary amine of the formula R′2NH where R′ =alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R =alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Abstract translation: 本发明涉及通过使三卤化铟In x 3（其中X = F，Cl，Br，I）与式R'2NH的仲胺（其中R'=烷基）以8:1摩尔比与 在其中R =烷基的通式ROH的醇的存在下，相对于三卤化铟的20:1，其制备方法及其用于生产含氧化铟或（半）导电层的用途 。

公开(公告)号：US09293326B2

公开(公告)日：2016-03-22

申请号：US14407681

申请日：2013-06-04

Applicant: Juergen Steiger ,  Dennis Fruehling ,  Alexey Merkulov ,  Arne Hoppe

Inventor： Juergen Steiger ,  Dennis Fruehling ,  Alexey Merkulov ,  Arne Hoppe

IPC: H01L29/02 ,  H01L21/02 ,  C23C18/12 ,  C23C18/14 ,  H01L31/18 ,  C07F5/00 ,  H01L21/477 ,  H01L29/24

CPC classification number: H01L21/02565 ,  C07F5/003 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1279 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/02628 ,  H01L21/477 ,  H01L29/24 ,  H01L31/1884 ,  Y02E10/50

Abstract: The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula MxOy(OR)z[O(R′O)eH]aXbYc[R″OH]d with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R′, R″=organic remainder, X═F, Cl, Br, I, and Y═—NO3, —NO2, where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.

Abstract translation: 本发明涉及一种用于生产含氧化铟的层的流相方法，其中包含至少一种通式MxOy（OR）z [O（R'O）eH] aXbYc [R “OH”d，其中x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 1-20，d = 0-25，e = 0 ，1，M = In，R，R'，R“=有机残基，X = F，Cl，Br，I和Y = -NO 3，-NO 2，其中b + c为1-20， 将溶剂施加到基材上，任选地干燥并转化成含氧化铟的层，转化为指示的通式的氧代 - 烷氧基化物，将包含所述含氧化合物的烷氧基化物的组合物涂覆到可以通过手段产生的层 根据本发明的方法和所述层的使用。

公开(公告)号：US09115422B2

公开(公告)日：2015-08-25

申请号：US13148967

申请日：2010-02-05

Applicant: Juergen Steiger ,  Heiko Thiem ,  Alexey Merkulov ,  Duy Vu Pham ,  Yvonne Damaschek ,  Arne Hoppe

Inventor： Juergen Steiger ,  Heiko Thiem ,  Alexey Merkulov ,  Duy Vu Pham ,  Yvonne Damaschek ,  Arne Hoppe

IPC: H01B1/02 ,  C23C18/12

CPC classification number: C23C18/1216 ,  C23C18/125

Abstract: The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.

Abstract translation: 本发明涉及含有至少一种铟醇盐和至少三种溶剂L1，L2和L3的液态含铟醇盐的组合物，其中溶剂L1选自乳酸乙酯，苯甲醚，四氢糠醇，丁基 乙酸酯，乙二醇二乙酸酯和苯甲酸乙酯，并且在SATP条件下两种溶剂L2和L3的沸点之间的差异为至少30℃，其制备方法及其用途。

公开(公告)号：US09059299B2

公开(公告)日：2015-06-16

申请号：US14348948

申请日：2012-09-12

Applicant: Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

Inventor： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

IPC: H01L29/786 ,  H01L21/02 ,  C23C18/12 ,  C23C18/14 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/78696 ,  C23C18/1208 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Abstract translation: 本发明涉及一种包括第一和第二金属氧化物层以及电介质层的半导体层压体的制造方法，其中第一金属氧化物层被布置在第二金属氧化物层和电介质层之间。 第一和第二金属氧化物层相应地由第一和第二液相形成。 本发明还涉及可以从这种方法获得的半导体层压体以及包含这种半导体层压体的电子部件。

公开(公告)号：US08580989B2

公开(公告)日：2013-11-12

申请号：US13515007

申请日：2010-07-01

Applicant: Juergen Steiger ,  Alexey Merkulov ,  Dennis Fruehling ,  Arne Hoppe ,  Nicole Brausch

Inventor： Juergen Steiger ,  Alexey Merkulov ,  Dennis Fruehling ,  Arne Hoppe ,  Nicole Brausch

IPC: C07F5/00

CPC classification number: C07F5/003

Abstract: The present invention relates to a process for the preparation of indium(III) halodialkoxides of the generic formula InX(OR)2 where X=F, Cl, Br, I and R=alkyl radical, alkoxyalkyl radical, in which a composition (A) comprising an indium trihalide InX3, where X=F, Cl, Br and/or I, and at least one alcohol of the generic formula ROH, where R=alkyl radical, alkyloxyalkyl radical, is reacted with a composition (B) comprising at least one secondary amine of the generic formula R′2NH, where R′=alkyl radical, to the indium(III) halodialkoxides which can be prepared by the process and to their use.

Abstract translation: 本发明涉及制备通式为InX（OR）2的铟（III）卤代烷氧化物的方法，其中X = F，Cl，Br，I和R =烷基，烷氧基烷基，其中组合物（A ），其中X = F，Cl，Br和/或I，以及至少一种通式ROH的醇，其中R =烷基，烷氧基烷基基团与组合物（B）反应，所述组合物包含 至少一种通式R'2NH的仲胺，其中R'=烷基，可以通过该方法制备的铟（III）卤代烷氧化物及其用途。

公开(公告)号：US20120181488A1

公开(公告)日：2012-07-19

申请号：US13390840

申请日：2010-08-13

Applicant: Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

Inventor： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC: H01B1/08 ,  B05D5/00 ,  B05D1/18 ,  B05D3/06 ,  B05D3/12 ,  B05D1/02 ,  B05D3/02 ,  B05D7/24 ,  B05D1/30

CPC classification number: C23C18/1216 ,  C23C18/1258

Abstract: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Abstract translation: 本发明涉及一种从非水溶液中生产含金属氧化物的层的液相方法。 在所述方法中，无水组合物含有i）至少一种通式为MxOy（OR）z [O（R'O）cH] aXb [R“OH] d的金属氧代 - 醇盐，其中M = In，Ga，Sn ，和/或Zn，x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = 0-25，R， R'，R“=有机基团，X = F，Cl，Br，I和ii）将至少一种溶剂施加到基材上，任选地干燥，并转化为含金属氧化物的层。 本发明还涉及可以使用本发明的方法生产的层及其用途。

公开(公告)号：US20150170913A1

公开(公告)日：2015-06-18

申请号：US14407681

申请日：2013-06-04

Applicant: Juergen Steiger ,  Dennis Fruehling ,  Alexey Merkulov ,  Arne Hoppe

Inventor： Juergen Steiger ,  Dennis Fruehling ,  Alexey Merkulov ,  Arne Hoppe

IPC: H01L21/02 ,  H01L21/477 ,  C07F5/00 ,  H01L29/24

CPC classification number: H01L21/02565 ,  C07F5/003 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1279 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/02628 ,  H01L21/477 ,  H01L29/24 ,  H01L31/1884 ,  Y02E10/50

Abstract: The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula MxOy(OR)z[O(R′O)eH]aXbYc[R″OH]d with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R′, R″=organic remainder, X═F, Cl, Br, I, and Y═—NO3, —NO2, where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.

Abstract translation: 本发明涉及一种用于生产含氧化铟的层的流相方法，其中包含至少一种通式MxOy（OR）z [O（R'O）eH] aXbYc [R “OH”d，其中x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 1-20，d = 0-25，e = 0 ，1，M = In，R，R'，R“=有机残基，X = F，Cl，Br，I和Y = -NO 3，-NO 2，其中b + c为1-20， 将溶剂施加到基材上，任选地干燥并转化成含氧化铟的层，转化为指示的通式的氧代 - 烷氧基化物，将包含所述含氧化合物的烷氧基化物的组合物涂覆到可以通过手段产生的层 根据本发明的方法和所述层的使用。

公开(公告)号：US20130104773A1

公开(公告)日：2013-05-02

申请号：US13809423

申请日：2011-07-12

Applicant: Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

Inventor： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

IPC: C07F5/00

CPC classification number: C07F5/003 ,  C07C31/28 ,  C09D1/00 ,  C23C18/1216

Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X=F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Abstract translation: 本发明涉及通式为InO 2 O（OH）（OR）12 X 4（ROH）x的卤代卤代烷氧基化物，其中R = C 1 -C 15 - 烷基，C 1 -C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基 - 或C 7 -C 15 - 烷氧基芳基，X = F，Cl，Br，I和x = 0至10，用于其制备和使用。

公开(公告)号：US20110315982A1

公开(公告)日：2011-12-29

申请号：US13201107

申请日：2010-02-05

Applicant: Arne Hoppe ,  Alexey Merkulov ,  Juergen Steiger ,  Duy Vu Pham ,  Yvonne Damaschek ,  Heiko Thiem

Inventor： Arne Hoppe ,  Alexey Merkulov ,  Juergen Steiger ,  Duy Vu Pham ,  Yvonne Damaschek ,  Heiko Thiem

IPC: H01L21/368 ,  H01L29/24

CPC classification number: C23C18/1216

Abstract: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.

Abstract translation: 本发明涉及一种生产半导体氧化铟层的方法，其中衬底被涂覆有液体，无水组合物，其包含a）至少一种铟醇盐和b）至少一种溶剂，任选地在更大的温度下进行干燥和热处理 超过250℃，可通过该方法生产的层及其用途。

公开(公告)号：US09802964B2

公开(公告)日：2017-10-31

申请号：US14900936

申请日：2014-05-15

Applicant: Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe ,  Dennis Fruehling

Inventor： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe ,  Dennis Fruehling

IPC: C07F5/00 ,  C23C18/12 ,  H01L21/288 ,  C23C18/14

CPC classification number: C07F5/003 ,  C07F5/00 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/288

Abstract: The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.