摘要:
The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.
摘要:
The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.
摘要:
The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.
摘要:
Acrylate-terminated urethane polybutadienes are obtained by reaction of low-monomer 1:1 monoadducts of reactive olefinic compounds and diisocyanates with hydroxy-terminated polybutadienes.
摘要:
The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.
摘要翻译:本发明涉及一种从非水溶液制备含氧化铟含量层的液相方法,其中含有至少一种通式M x O y(OR)z [O(R'O)c H] aXb [R“OH] d,其中x = 3-25,y = 1-10,z = 3-50,a = 0-25,b = 0-20,c = 0-1,d = M = In,R,R',R“=有机基团,X = F,Cl,Br,I和至少一种溶剂施加到基材上,任选地干燥,并转化为含氧化铟的层, 可通过本发明方法生产的层及其用途。
摘要:
The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.
摘要:
The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.
摘要:
The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.
摘要:
The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.
摘要:
The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R′CH(O)COOR″)2(HOR)x(HNR′″2)y where X═F, Cl, Br and/or I, R═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.