PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS
    1.
    发明申请
    PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS 有权
    生产含氧化ING层的方法

    公开(公告)号:US20130221352A1

    公开(公告)日:2013-08-29

    申请号:US13884495

    申请日:2011-10-26

    摘要: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

    摘要翻译: 本发明涉及一种用于生产含氧化铟的层的液相方法,其中可以从包含至少一种氧化铟前体和至少一种溶剂和/或分散介质的混合物制备的涂料组合物以点a )至d),a)施加到基底上,b)用电磁辐射照射施加到基底上的组合物,c)任选干燥,d)热转换成含氧化铟的层,其中氧化铟前体 是通式为InX(OR)2的卤素烷氧化物,其中R是烷基和/或烷氧基烷基,X是F,Cl,Br或I,并且用具有显着部分辐射的电磁辐射进行照射 170-210nm和250-258nm的范围,与该方法可生产的含氧化铟的层及其用途。

    Method for the production of layers containing indium oxide
    5.
    发明授权
    Method for the production of layers containing indium oxide 有权
    用于生产含有氧化铟的层的方法

    公开(公告)号:US09315901B2

    公开(公告)日:2016-04-19

    申请号:US13391114

    申请日:2010-08-13

    IPC分类号: C23C18/12

    CPC分类号: C23C18/1216 C23C18/1258

    摘要: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

    摘要翻译: 本发明涉及一种从非水溶液制备含氧化铟含量层的液相方法,其中含有至少一种通式M x O y(OR)z [O(R'O)c H] aXb [R“OH] d,其中x = 3-25,y = 1-10,z = 3-50,a = 0-25,b = 0-20,c = 0-1,d = M = In,R,R',R“=有机基团,X = F,Cl,Br,I和至少一种溶剂施加到基材上,任选地干燥,并转化为含氧化铟的层, 可通过本发明方法生产的层及其用途。

    Method for the production of metal oxide-containing layers
    6.
    发明授权
    Method for the production of metal oxide-containing layers 有权
    用于生产含金属氧化物的层的方法

    公开(公告)号:US09309595B2

    公开(公告)日:2016-04-12

    申请号:US13390840

    申请日:2010-08-13

    IPC分类号: C23C18/12

    CPC分类号: C23C18/1216 C23C18/1258

    摘要: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

    摘要翻译: 本发明涉及一种从非水溶液中生产含金属氧化物的层的液相方法。 在所述方法中,无水组合物含有i)至少一种通式为MxOy(OR)z [O(R'O)cH] aXb [R“OH] d的金属氧代 - 醇盐,其中M = In,Ga,Sn ,和/或Zn,x = 3-25,y = 1-10,z = 3-50,a = 0-25,b = 0-20,c = 0-1,d = 0-25,R, R',R“=有机基团,X = F,Cl,Br,I和ii)将至少一种溶剂施加到基材上,任选地干燥,并转化为含金属氧化物的层。 本发明还涉及可以使用本发明的方法生产的层及其用途。

    INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE
    10.
    发明申请
    INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE 有权
    用于生产包含氧化铝的涂料的氧化铝氧化物

    公开(公告)号:US20130116463A1

    公开(公告)日:2013-05-09

    申请号:US13809322

    申请日:2011-07-07

    IPC分类号: C07F5/00

    摘要: The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R′CH(O)COOR″)2(HOR)x(HNR′″2)y where X═F, Cl, Br and/or I, R═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

    摘要翻译: 本发明涉及通式为In 6 O 2 X 6(OR)6(R'CH(O)COOR“)2(HOR)x(HNR”2)y的卤代铟氧代醇,其中X = F,Cl,Br 和/或I,R = C 1 -C 15 - 烷基,C 1 -C 15 - 烯基,C 1 -C 15 - 炔基,C 1 -C 15 - 烷氧基烷基,C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基,R'= C 1 C 1 -C 15烷基,C 1 -C 15 - 烯基,C 1 -C 15炔基,C 1 -C 15 - 烷氧基烷基,C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基,R“= C 1 -C 15 - 烷基, C 15 - 烯基,C 1 -C 15 - 炔基,C 1 -C 15 - 烷氧基烷基,C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基,R“= C 1 -C 15 - 烷基,C 1 -C 15 - 烯基, C 15 - 炔基,C 1 -C 15 - 烷氧基烷基,C 6 -C 15 - 芳基 - 和/或C 7 -C 15 - 烷氧基芳基,x = 0至10和y = 0至10,其制备方法和用途。