利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.016 秒)

    Method for the production of layers containing indium oxide
    3.
    发明授权
    Method for the production of layers containing indium oxide 有权
    用于生产含有氧化铟的层的方法

    公开(公告)号：US09315901B2

    公开(公告)日：2016-04-19

    申请号：US13391114

    申请日：2010-08-13

    申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    IPC分类号： C23C18/12

    CPC分类号： C23C18/1216 ,  C23C18/1258

    摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

    摘要翻译： 本发明涉及一种从非水溶液制备含氧化铟含量层的液相方法，其中含有至少一种通式M x O y（OR）z [O（R'O）c H] aXb [R“OH] d，其中x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = M = In，R，R'，R“=有机基团，X = F，Cl，Br，I和至少一种溶剂施加到基材上，任选地干燥，并转化为含氧化铟的层， 可通过本发明方法生产的层及其用途。

    Method for the production of metal oxide-containing layers
    4.
    发明授权
    Method for the production of metal oxide-containing layers 有权
    用于生产含金属氧化物的层的方法

    公开(公告)号：US09309595B2

    公开(公告)日：2016-04-12

    申请号：US13390840

    申请日：2010-08-13

    申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    IPC分类号： C23C18/12

    CPC分类号： C23C18/1216 ,  C23C18/1258

    摘要： The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

    摘要翻译： 本发明涉及一种从非水溶液中生产含金属氧化物的层的液相方法。 在所述方法中，无水组合物含有i）至少一种通式为MxOy（OR）z [O（R'O）cH] aXb [R“OH] d的金属氧代 - 醇盐，其中M = In，Ga，Sn ，和/或Zn，x = 3-25，y = 1-10，z = 3-50，a = 0-25，b = 0-20，c = 0-1，d = 0-25，R， R'，R“=有机基团，X = F，Cl，Br，I和ii）将至少一种溶剂施加到基材上，任选地干燥，并转化为含金属氧化物的层。 本发明还涉及可以使用本发明的方法生产的层及其用途。

    Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite
    6.
    发明授权
    Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite 有权
    含热解氧化锌的复合层和场效应晶体管包括该复合材料

    公开(公告)号：US08907333B2

    公开(公告)日：2014-12-09

    申请号：US12596150

    申请日：2008-03-10

    申请人： Frank-Martin Petrat ,  Heiko Thiem ,  Sven Hill ,  Andre Ebbers ,  Koshi Okamura ,  Roland Schmechel

    发明人： Frank-Martin Petrat ,  Heiko Thiem ,  Sven Hill ,  Andre Ebbers ,  Koshi Okamura ,  Roland Schmechel

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/3205 ,  H01L29/786

    CPC分类号： H01L21/32055 ,  H01L29/7869

    摘要： Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

    摘要翻译： 包括电介质层和包含热解氧化锌并结合到电介质层的层的层的复合物。 制造层的复合体的方法，其中将热解氧化锌以平均聚集体直径小于200nm的存在氧化锌颗粒的分散体形式施加到电介质层，氧化锌层 干燥，然后在小于200℃的温度下处理。制备层的复合物的方法，其中将热解氧化锌施加到基质层或基质层的复合物，其中锌的分散体 存在平均聚集体直径小于200nm的氧化物颗粒以形成氧化锌层，然后在小于200℃的温度下处理氧化锌层和基底层，然后施加电介质层 到氧化锌层。 具有复合层的场效应晶体管。

    INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE
    8.
    发明申请
    INDIUM OXOALKOXIDES FOR PRODUCING COATINGS CONTAINING INDIUM OXIDE 有权
    用于生产包含氧化铝的涂料的氧化铝氧化物

    公开(公告)号：US20130116463A1

    公开(公告)日：2013-05-09

    申请号：US13809322

    申请日：2011-07-07

    申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    IPC分类号： C07F5/00

    CPC分类号： C07F5/00 ,  C07F5/069 ,  C23C18/1216 ,  C23C18/1254

    摘要： The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R′CH(O)COOR″)2(HOR)x(HNR′″2)y where X═F, Cl, Br and/or I, R═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R′″═C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

    摘要翻译： 本发明涉及通式为In 6 O 2 X 6（OR）6（R'CH（O）COOR“）2（HOR）x（HNR”2）y的卤代铟氧代醇，其中X = F，Cl，Br 和/或I，R = C 1 -C 15 - 烷基，C 1 -C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R'= C 1 C 1 -C 15烷基，C 1 -C 15 - 烯基，C 1 -C 15炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基， C 15 - 烯基，C 1 -C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基和/或C 7 -C 15 - 烷氧基芳基，R“= C 1 -C 15 - 烷基，C 1 -C 15 - 烯基， C 15 - 炔基，C 1 -C 15 - 烷氧基烷基，C 6 -C 15 - 芳基 - 和/或C 7 -C 15 - 烷氧基芳基，x = 0至10和y = 0至10，其制备方法和用途。

    PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS
    9.
    发明申请
    PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS 有权
    生产含氧化ING层的方法

    公开(公告)号：US20130221352A1

    公开(公告)日：2013-08-29

    申请号：US13884495

    申请日：2011-10-26

    申请人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    发明人： Juergen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    IPC分类号： H01L21/02 ,  H01L29/22 ,  H01L29/43 ,  H01L21/288

    CPC分类号： H01L21/02628 ,  C23C18/1216 ,  H01L21/288 ,  H01L29/22 ,  H01L29/43

    摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

    摘要翻译： 本发明涉及一种用于生产含氧化铟的层的液相方法，其中可以从包含至少一种氧化铟前体和至少一种溶剂和/或分散介质的混合物制备的涂料组合物以点a ）至d），a）施加到基底上，b）用电磁辐射照射施加到基底上的组合物，c）任选干燥，d）热转换成含氧化铟的层，其中氧化铟前体 是通式为InX（OR）2的卤素烷氧化物，其中R是烷基和/或烷氧基烷基，X是F，Cl，Br或I，并且用具有显着部分辐射的电磁辐射进行照射 170-210nm和250-258nm的范围，与该方法可生产的含氧化铟的层及其用途。

    PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS, INDIUM OXIDE-CONTAINING LAYERS PRODUCED BY THE PROCESS AND USE THEREOF
    10.
    发明申请
    PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS, INDIUM OXIDE-CONTAINING LAYERS PRODUCED BY THE PROCESS AND USE THEREOF 有权
    生产含氧化ING层的方法，由该方法生产的含氧化钇层及其用途

    公开(公告)号：US20130122647A1

    公开(公告)日：2013-05-16

    申请号：US13516900

    申请日：2010-11-25

    申请人： Jürgen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    发明人： Jürgen Steiger ,  Duy Vu Pham ,  Heiko Thiem ,  Alexey Merkulov ,  Arne Hoppe

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0032 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/125 ,  C23C18/14 ,  H01L21/02565 ,  H01L21/02628

    摘要： The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

    摘要翻译： 本发明涉及一种用于从非水溶液制备含氧化铟的层的液相方法，其中含有至少一种通式为InX（OR）2的卤素烷氧化物的无水组合物，其中R =烷基和/或烷氧基烷基 基团和X = F，Cl，Br或I，并且至少一种溶剂或分散介质按照a）至d）的顺序，在无水气氛中，a）施加到基材上，b）施加到 用360nm波长的电磁辐射照射衬底，c）任选地干燥，然后d）热转换成含氧化铟的层到可通过该方法生产的层及其用途。