Invention Grant
- Patent Title: Method for manufacturing semiconductor structures
- Patent Title (中): 半导体结构的制造方法
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Application No.: US13859720Application Date: 2013-04-09
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Publication No.: US09196500B2Publication Date: 2015-11-24
- Inventor: Ching-Ling Lin , Po-Chao Tsao , Chia-Jui Liang , Chien-Ting Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L21/8234 ; H01L21/8238 ; H01L29/66
Abstract:
A method for manufacturing semiconductor structures includes providing a substrate having a plurality of mandrel patterns and a plurality of dummy patterns, simultaneously forming a plurality of first spacers on sidewalls of the mandrel patterns and a plurality of second spacers on sidewalls of the dummy patterns, and removing the second spacers and the mandrel patterns to form a plurality of spacer patterns on the substrate.
Public/Granted literature
- US20140302677A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURES Public/Granted day:2014-10-09
Information query
IPC分类:
