Invention Grant
- Patent Title: LDMOS CHC reliability
- Patent Title (中): LDMOS CHC可靠性
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Application No.: US14557648Application Date: 2014-12-02
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Publication No.: US09196728B2Publication Date: 2015-11-24
- Inventor: Seetharaman Sridhar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/06 ; H01L29/04 ; H01L21/3105 ; H01L21/311
Abstract:
An integrated circuit on a rotated substrate with an LDMOS transistor. A method of enhancing the CHC performance of an LDMOS transistor by growing a second STI liner oxide. A method of enhancing the CHC performance of an LDMOS transistor building the LDMOS transistor on a rotated substrate and growing a second STI liner oxide.
Public/Granted literature
- US20150187937A1 LDMOS CHC RELIABILITY Public/Granted day:2015-07-02
Information query
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