- 专利标题: Automatic optimization of etch process for accelerated yield ramp with matched charged particle multi-beam systems
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申请号: US14607821申请日: 2015-01-28
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公开(公告)号: US09207539B1公开(公告)日: 2015-12-08
- 发明人: David K. Lam , Kevin M. Monahan , Theodore A. Prescop , Cong Tran
- 申请人: Multibeam Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Multibeam Corporation
- 当前专利权人: Multibeam Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Seth A. Horwitz
- 主分类号: H01J37/08
- IPC分类号: H01J37/08 ; H01J37/30 ; G03F7/20 ; H01J37/317 ; H01J37/304
摘要:
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.
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