发明授权
US09209181B2 Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
有权
在CMOS应用中用逆向阱形成晶体管的方法以及所得到的器件结构
- 专利标题： Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
- 专利标题（中）： 在CMOS应用中用逆向阱形成晶体管的方法以及所得到的器件结构
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申请号： US13918536申请日： 2013-06-14
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公开(公告)号： US09209181B2公开(公告)日： 2015-12-08
- 发明人: Vara G. Reddy Vakada , Laegu Kang , Michael Ganz , Yi Qi , Puneet Khanna , Srikanth Balaji Samavedam , Sri Charan Vemula , Manfred Eller
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
A method includes forming a layer of silicon-carbon on an N-active region, performing a common deposition process to form a layer of a first semiconductor material on the layer of silicon-carbon and on the P-active region, masking the N-active region, forming a layer of a second semiconductor material on the first semiconductor material in the P-active region and forming N-type and P-type transistors. A device includes a layer of silicon-carbon positioned on an N-active region, a first layer of a first semiconductor positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on a P-active region, a layer of a second semiconductor material positioned on the second layer of the first semiconductor material, and N-type and P-type transistors.
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