Invention Grant
- Patent Title: Laser via drilling apparatus and methods
- Patent Title (中): 激光通孔钻孔设备及方法
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Application No.: US11319824Application Date: 2005-12-28
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Publication No.: US09211609B2Publication Date: 2015-12-15
- Inventor: Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
- Applicant: Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Buckley, Maschoff & Talwalkar LLC
- Main IPC: B23K26/00
- IPC: B23K26/00 ; B23K26/38 ; B23K26/073 ; H01L21/311 ; H05K3/00 ; B23K26/40

Abstract:
A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.
Public/Granted literature
- US20070145024A1 Laser via drilling apparatus and methods Public/Granted day:2007-06-28
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