Invention Grant
- Patent Title: Electron beam exposure method
- Patent Title (中): 电子束曝光法
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Application No.: US14632944Application Date: 2015-02-26
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Publication No.: US09213240B2Publication Date: 2015-12-15
- Inventor: Shinichi Hamaguchi , Masaki Kurokawa , Masahiro Takizawa
- Applicant: ADVANTEST CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Advantest Corp.
- Current Assignee: Advantest Corp.
- Current Assignee Address: JP Tokyo
- Agency: Maramatsu & Associates
- Priority: JP2012-235507 20121025
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/20 ; H01J37/317 ; G03F1/50

Abstract:
An electron beam exposure method includes the steps of: preparing an exposure mask having a plurality of opening patterns formed by dividing a drawing object pattern into exposable regions; and drawing the drawing object pattern by performing exposure with an electron beam passing through the opening patterns of the exposure mask. Each end portion serving as a joint in each opening pattern of the exposure mask is provided with a joining portion tapered in a width of the opening pattern. The exposure is performed in such a way that portions drawn through adjacent joining portions overlap each other.
Public/Granted literature
- US20150243482A1 ELECTRON BEAM EXPOSURE METHOD Public/Granted day:2015-08-27
Information query
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