Invention Grant
- Patent Title: Method of forming trench in semiconductor substrate
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Application No.: US14582210Application Date: 2014-12-24
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Publication No.: US09214384B2Publication Date: 2015-12-15
- Inventor: Tong-Yu Chen , Chih-Jung Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L21/033 ; H01L21/308 ; H01L21/28 ; H01L29/66
Abstract:
The present invention provides a method of forming a trench in a semiconductor substrate. First, a first patterned mask layer is formed on a semiconductor substrate. The first patterned mask layer has a first trench. Then, a material layer is formed along the first trench. Then, a second patterned mask layer is formed on the material layer to completely fill the first trench. A part of the material layer is removed when the portion of the material layer between the second patterned mask layer and the semiconductor substrate is maintained so as to form a second trench. Lastly, an etching process is performed by using the first patterned mask layer and the second patterned mask layer as a mask.
Public/Granted literature
- US20150111385A1 Method of Forming Trench in Semiconductor Substrate Public/Granted day:2015-04-23
Information query
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