Invention Grant
US09222169B2 Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles
有权
具有嵌入式纳米晶半导体颗粒的氧化硅 - 氮化碳 - 碳化物薄膜
- Patent Title: Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles
- Patent Title (中): 具有嵌入式纳米晶半导体颗粒的氧化硅 - 氮化碳 - 碳化物薄膜
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Application No.: US12467969Application Date: 2009-05-18
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Publication No.: US09222169B2Publication Date: 2015-12-29
- Inventor: Pooran Chandra Joshi , Apostolos T. Voutsas
- Applicant: Pooran Chandra Joshi , Apostolos T. Voutsas
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C23C16/30 ; C23C16/509 ; C23C16/56 ; H01L21/02 ; H01L21/316 ; H01L33/42
Abstract:
A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.
Public/Granted literature
- US20090217968A1 Silicon Oxide-Nitride-Carbide with Embedded Nanocrystalline Semiconductor Particles Public/Granted day:2009-09-03
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