Invention Grant
US09224644B2 Method to control depth profiles of dopants using a remote plasma source
有权
使用远程等离子体源控制掺杂剂深度分布的方法
- Patent Title: Method to control depth profiles of dopants using a remote plasma source
- Patent Title (中): 使用远程等离子体源控制掺杂剂深度分布的方法
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Application No.: US13726972Application Date: 2012-12-26
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Publication No.: US09224644B2Publication Date: 2015-12-29
- Inventor: Sandip Niyogi , Amol Joshi , Chi-I Lang , Salil Mujumdar
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C14/58 ; C23C16/455 ; H01L21/02 ; H01L21/3115 ; H01L21/3215 ; H01J37/32 ; H01L21/28 ; H01L29/51 ; H01L21/67 ; H01L21/687 ; H01L29/66
Abstract:
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.
Public/Granted literature
- US20140179100A1 Method to Control Depth Profiles of Dopants Using a Remote Plasma Source Public/Granted day:2014-06-26
Information query
IPC分类:
