发明授权
- 专利标题： Method for fabricating semiconductor device and the semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US13981048申请日： 2012-01-23
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公开(公告)号： US09230799B2公开(公告)日： 2016-01-05
- 发明人: Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
- 申请人： Akinobu Teramoto , Hiroshi Kambayashi , Hirokazu Ueda , Yuichiro Morozumi , Katsushige Harada , Kazuhide Hasebe , Tadahiro Ohmi
- 申请人地址： JP Sendai-shi JP Kawasaki-shi JP Tokyo
- 专利权人： TOHOKU UNIVERSITY,Fuji Electric Co., Ltd.,TOKYO ELECTRON LIMITED
- 当前专利权人： TOHOKU UNIVERSITY,Fuji Electric Co., Ltd.,TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Sendai-shi JP Kawasaki-shi JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-013066 20110125
- 国际申请： PCT/JP2012/051348 WO 20120123
- 国际公布： WO2012/102237 WO 20120802
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02 ; H01L21/28 ; H01L29/66 ; H01L29/778 ; H01L29/423 ; H01L23/00 ; H01L29/205 ; H01L29/51
摘要：
A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.